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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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4,485個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Texas Instruments |
30,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
35,071
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
35,071
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
10,624
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
10,624
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
11,490
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA |