Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
4,485個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3006E6TA
Diodes Incorporated
21,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3003E6TA
Diodes Incorporated
9,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3006E6QTA
Diodes Incorporated
6,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3004E6TA
Diodes Incorporated
33,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
SN75451BDR
Texas Instruments
30,000
3日
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Tape & Reel (TR) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75451BDR
Texas Instruments
35,071
3日
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Cut Tape (CT) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75451BDR
Texas Instruments
35,071
3日
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
- - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
7,500
3日
-
MOQ: 2500  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
Tape & Reel (TR) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
10,624
3日
-
MOQ: 1  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
Cut Tape (CT) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
10,624
3日
-
MOQ: 1  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
- - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 5ns,7ns 0.8V,2V 500mA,500mA
SN75477DR
Texas Instruments
7,500
3日
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 - 50ns,90ns 0.8V,2V 500mA,500mA
SN75477DR
Texas Instruments
11,490
3日
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Cut Tape (CT) - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 - 50ns,90ns 0.8V,2V 500mA,500mA