- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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138個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,SiC MOSFET | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | - | 8A,8A | ||||
Texas Instruments |
57,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
58,680
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
58,680
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
13,628
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
13,628
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,8A | ||||
Texas Instruments |
6,000
|
3日 |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
6,964
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A |