- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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150個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Analog Devices Inc. |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
9,980
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
9,980
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
IXYS Integrated Circuits Division |
8,138
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
3,785
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
4,679
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
3,463
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
2,088
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
2,404
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Analog Devices Inc. |
2,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,805
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,805
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Maxim Integrated |
437
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 32ns,26ns | 0.8V,2.1V | 4A,4A | ||||
IXYS Integrated Circuits Division |
6,000
|
3日 |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
9,707
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
9,707
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Monolithic Power Systems Inc. |
2,200
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
Cut Tape (CT) | - | - | - | 8-SOIC-EP | - | - | - | - | - | - | - | - | ||||
Monolithic Power Systems Inc. |
2,200
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | - | - | - | 8-SOIC-EP | - | - | - | - | - | - | - | - | ||||
Analog Devices Inc. |
お問い合わせ
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,170
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A |