145個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ADP3624ARDZ-RL
Analog Devices Inc.
7,500
3日
-
MOQ: 2500  MPQ: 1
IC DVR DUAL NONINVERT 4A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3624ARDZ-RL
Analog Devices Inc.
9,980
3日
-
MOQ: 1  MPQ: 1
IC DVR DUAL NONINVERT 4A 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3624ARDZ-RL
Analog Devices Inc.
9,980
3日
-
MOQ: 1  MPQ: 1
IC DVR DUAL NONINVERT 4A 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
IXDN609SI
IXYS Integrated Circuits Division
8,138
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDD609SI
IXYS Integrated Circuits Division
3,785
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN604SI
IXYS Integrated Circuits Division
4,679
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL NONINV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A
IXDD604SI
IXYS Integrated Circuits Division
3,463
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL ENABLE 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A
IXDF604SI
IXYS Integrated Circuits Division
2,088
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL IN/NON 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A
IXDI604SI
IXYS Integrated Circuits Division
2,404
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
2,500
3日
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
4,805
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
4,805
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
MAX5056AASA+
Maxim Integrated
437
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET 32ns,26ns 0.8V,2.1V 4A,4A
IXDN609SITR
IXYS Integrated Circuits Division
6,000
3日
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
9,707
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Cut Tape (CT) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
9,707
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
MP18021HN-LF-Z
Monolithic Power Systems Inc.
2,200
3日
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
Cut Tape (CT) - - - 8-SOIC (0.154",3.90mm Width) Exposed Pad - - - - - - - -
MP18021HN-LF-Z
Monolithic Power Systems Inc.
2,200
3日
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
- - - - 8-SOIC (0.154",3.90mm Width) Exposed Pad - - - - - - - -
ADP3654ARDZ-RL
Analog Devices Inc.
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
2,170
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A