- Series：
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- Voltage - Supply：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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690個の商品を探す
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
23,086
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT26
|
Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，SiC MOSFET | 48ns，35ns | - | 10A，10A | ||
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Diodes Incorporated |
11,323
|
3日 |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | - | 5A，5A | ||
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Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，SiC MOSFET | 48ns，35ns | - | 10A，10A | ||
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|
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Diodes Incorporated |
34,034
|
3日 |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 13.4ns，12.4ns | - | 8A，8A | ||
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Texas Instruments |
35,071
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
10,624
|
3日 |
-
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MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
11,490
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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Infineon Technologies |
15,397
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC DRIVER LOW SIDE 1.5A SOT23-5
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μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
42,369
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
11,053
|
3日 |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
9,070
|
3日 |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Diodes Incorporated |
5,330
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 450ns，21ns | - | 2.5A，6A | ||
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ON Semiconductor |
11,569
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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ON Semiconductor |
12,102
|
3日 |
-
|
MOQ: 1 MPQ: 1
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IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
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Texas Instruments |
28,650
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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|
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Texas Instruments |
4,831
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
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|
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Infineon Technologies |
241,985
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
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Texas Instruments |
11,973
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
|
|
|
Texas Instruments |
8,254
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 7A 8MSOP
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
|
|
|
Texas Instruments |
58,680
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8ns，7ns | 1V，2.4V | 4A，8A |
