- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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108個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
1,635
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
1,635
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
995
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
995
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28-SOIC
|
- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
921
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
921
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
872
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
872
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
ON Semiconductor |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
40
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
40
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
Tape & Reel (TR) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
Cut Tape (CT) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
ON Semiconductor |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
お問い合わせ
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA |