- Packaging:
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- Voltage - Supply:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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5個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
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MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | 15 V ~ 20 V | Half-Bridge | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | 15 V ~ 20 V | Half-Bridge | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | 15 V ~ 20 V | Half-Bridge | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
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MOQ: 980 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tube | 15 V ~ 20 V | Half-Bridge | IGBT,N-Channel MOSFET | 1200V | 9.4ns,9.7ns | 6V,9.5V | 2A,2A | ||||
IXYS |
お問い合わせ
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- |
-
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MOQ: 27 MPQ: 1
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IC MOSFET DRVR DUAL 15A 28-SOIC
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Tube | 8 V ~ 30 V | Low-Side | N-Channel,P-Channel MOSFET | - | 4.5ns,3.5ns | 0.8V,3.5V | 15A,15A |