Number of Drivers:
High Side Voltage - Max (Bootstrap):
771個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3006E6TA
Diodes Incorporated
21,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) Automotive,AEC-Q101 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) Automotive,AEC-Q101 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- Automotive,AEC-Q101 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3003E6TA
Diodes Incorporated
9,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns - 5A,5A
ZXGD3006E6QTA
Diodes Incorporated
6,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) - 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- - 40V (Max) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns - 10A,10A
ZXGD3004E6TA
Diodes Incorporated
33,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns - 8A,8A
IX4427MTR
IXYS Integrated Circuits Division
42,000
3日
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
Tape & Reel (TR) - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427MTR
IXYS Integrated Circuits Division
42,369
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
Cut Tape (CT) - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427MTR
IXYS Integrated Circuits Division
42,369
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
- - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
10,000
3日
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
Tape & Reel (TR) - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
11,053
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
Cut Tape (CT) - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
11,053
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
- - 4.5 V ~ 30 V 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427NTR
IXYS Integrated Circuits Division
8,000
3日
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 30 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427NTR
IXYS Integrated Circuits Division
9,070
3日
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Cut Tape (CT) - 4.5 V ~ 30 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A