- Packaging：
-
- Voltage - Supply：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
17個の商品を探す
 |
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Diodes Incorporated |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
33,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Infineon Technologies |
3,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
- | μHVIC | 10 V ~ 18 V | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA | ||
|
|
|
Diodes Incorporated |
お問い合わせ
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 12V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
1,932
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 12V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
1,932
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 12V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | 9A，9A | ||
|
|
Diodes Incorporated |
お問い合わせ
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | |||
|
|
Diodes Incorporated |
お問い合わせ
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 12V (Max) | Low-Side | N-Channel MOSFET | - | 7.3ns，11ns | 9A，9A |
