ROHM Semiconductor

RGT40NS65DGTL

説明 :
IGBT 650V 40A 161W TO-263S
パッケージ :
LPDS (TO-263S)
Current - Collector (Ic) (Max) :
40A
Current - Collector Pulsed (Icm) :
60A
Gate Charge :
40nC
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
TO-263-3,D2Pak (2 Leads + Tab),TO-263AB
Packaging :
Cut Tape (CT)
Power - Max :
161W
Reverse Recovery Time (trr) :
58ns
Series :
-
Supplier Device Package :
LPDS (TO-263S)
Switching Energy :
-
Td (on/off) @ 25°C :
22ns/75ns
Test Condition :
400V,20A,10 Ohm,15V
Vce(on) (Max) @ Vge,Ic :
2.1V @ 15V,20A
Voltage - Collector Emitter Breakdown (Max) :
650V

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