ON Semiconductor

NCP81075DR2G

説明 :
HIGH PERFORMANCE DUAL MOS
パッケージ :
8-SOIC
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
4A,4A
Driven Configuration :
High-Side or Low-Side
Gate Type :
N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
200V
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
0.8V,2.7V
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
-40°C ~ 140°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
Tape & Reel (TR)
Rise / Fall Time (Typ) :
8ns,7ns
Series :
-
Supplier Device Package :
8-SOIC
Voltage - Supply :
8.5 V ~ 20 V

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