IXDN602SI
- 説明 :
- MOSFET N-CH 2A DUAL LO SIDE 8-SO
- パッケージ :
- 8-SOIC-EP
- Channel Type :
- Independent
- Current - Peak Output (Source, Sink) :
- 2A,2A
- Driven Configuration :
- Low-Side
- Gate Type :
- IGBT,N-Channel,P-Channel MOSFET
- High Side Voltage - Max (Bootstrap) :
- -
- Input Type :
- Non-Inverting
- Logic Voltage - VIL, VIH :
- 0.8V,3V
- Mounting Type :
- Surface Mount
- Number of Drivers :
- 2
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154",3.90mm Width) Exposed Pad
- Packaging :
- Tube
- Rise / Fall Time (Typ) :
- 7.5ns,6.5ns
- Series :
- -
- Supplier Device Package :
- 8-SOIC-EP
- Voltage - Supply :
- 4.5 V ~ 35 V
正常に送信されました。
1営業日以内にあなたの情報に返信します。