IXYS Integrated Circuits Division

IXDN602SI

説明 :
MOSFET N-CH 2A DUAL LO SIDE 8-SO
パッケージ :
8-SOIC-EP
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
2A,2A
Driven Configuration :
Low-Side
Gate Type :
IGBT,N-Channel,P-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
-
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
0.8V,3V
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width) Exposed Pad
Packaging :
Tube
Rise / Fall Time (Typ) :
7.5ns,6.5ns
Series :
-
Supplier Device Package :
8-SOIC-EP
Voltage - Supply :
4.5 V ~ 35 V

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