Infineon Technologies

IR2011S

説明 :
HI/LO SIDE DRVR 8SOIC
パッケージ :
8-SOIC
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
1A,1A
Driven Configuration :
Half-Bridge
Gate Type :
N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
200V
Input Type :
Inverting
Logic Voltage - VIL, VIH :
0.7V,2.2V
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
Tube
Rise / Fall Time (Typ) :
35ns,20ns
Series :
-
Supplier Device Package :
8-SOIC
Voltage - Supply :
10 V ~ 20 V

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