ALD212900APAL

説明 :
MOSFET 2N-CH 10.6V 0.08A 8DIP
パッケージ :
8-PDIP
Current - Continuous Drain (Id) @ 25°C :
80mA
Drain to Source Voltage (Vdss) :
10.6V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual) Matched Pair
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
30pF @ 5V
Mounting Type :
Through Hole
Operating Temperature :
0°C ~ 70°C (TJ)
Package / Case :
8-DIP (0.300",7.62mm)
Packaging :
Tube
Power - Max :
500mW
Rds On (Max) @ Id,Vgs :
14 Ohm
Series :
EPAD,Zero Threshold
Supplier Device Package :
8-PDIP
Vgs(th) (Max) @ Id :
10mV @ 20μA

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