12個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Voltage - Supply Operating Temperature Package / Case Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2110-1
Infineon Technologies
お問い合わせ
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MOQ: 25  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
IR2112-1
Infineon Technologies
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MOQ: 25  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14-DIP
10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2113-1
Infineon Technologies
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MOQ: 25  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14-DIP
3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2A,2A
IR2110-1PBF
Infineon Technologies
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MOQ: 125  MPQ: 1
IC DRIVER HIGH/LOW SID 14DIP
3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
IR2112-1PBF
Infineon Technologies
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MOQ: 175  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14DIP
10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2113-1PBF
Infineon Technologies
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MOQ: 125  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14DIP
3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2A,2A
FAN7392N
ON Semiconductor
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MOQ: 1500  MPQ: 1
IC GATE DVR MONO HI/LO 14DIP
10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 4.5V,9.5V 3A,3A
TC4468CPD
Microchip Technology
466
3日
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MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 14DIP
4.5 V ~ 18 V 0°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) Low-Side 4 N-Channel,P-Channel MOSFET - 15ns,15ns 0.8V,2.4V 1.2A,1.2A
TC4468EPD
Microchip Technology
123
3日
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MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 14DIP
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) Low-Side 4 N-Channel,P-Channel MOSFET - 15ns,15ns 0.8V,2.4V 1.2A,1.2A
LT1160CN#PBF
Linear Technology/Analog Devices
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MOQ: 250  MPQ: 1
IC PWR MOSFET DRIVER N-CH 14-DIP
10 V ~ 15 V 0°C ~ 125°C (TJ) 14-DIP (0.300",7.62mm) Half-Bridge 2 N-Channel MOSFET 60V 130ns,60ns 0.8V,2V 1.5A,1.5A
LT1160IN#PBF
Linear Technology/Analog Devices
お問い合わせ
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MOQ: 225  MPQ: 1
IC PWR MOSFET DRIVER N-CH 14-DIP
10 V ~ 15 V -40°C ~ 125°C (TJ) 14-DIP (0.300",7.62mm) Half-Bridge 2 N-Channel MOSFET 60V 130ns,60ns 0.8V,2V 1.5A,1.5A
IXD611P7
IXYS
お問い合わせ
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MOQ: 400  MPQ: 1
IC DRVR HALF BRIDGE 600MA 14-PDI
10 V ~ 35 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) Half-Bridge 2 IGBT,N-Channel MOSFET 600V 28ns,18ns 2.4V,2.7V 600mA,600mA