Number of Drivers:
High Side Voltage - Max (Bootstrap):
124個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Operating Temperature Package / Case Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3103N8TC
Diodes Incorporated
5,000
3日
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
TD352IDT
STMicroelectronics
25,000
3日
-
MOQ: 2500  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Tape & Reel (TR) - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3日
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Cut Tape (CT) - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3日
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
- - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
DGD2104MS8-13
Diodes Incorporated
2,500
3日
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
ZXGD3107N8TC
Diodes Incorporated
2,500
3日
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Tape & Reel (TR) - 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
ZXGD3107N8TC
Diodes Incorporated
2,931
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Cut Tape (CT) - 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
ZXGD3107N8TC
Diodes Incorporated
2,931
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
- - 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
TD352ID
STMicroelectronics
1,708
3日
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Tube - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
STSR30D-TR
STMicroelectronics
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC DRIVER FLY BACK 8-SOIC
Tape & Reel (TR) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 40ns,40ns - 1.5A,1.5A
STSR30D-TR
STMicroelectronics
1,471
3日
-
MOQ: 1  MPQ: 1
IC DRIVER FLY BACK 8-SOIC
Cut Tape (CT) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 40ns,40ns - 1.5A,1.5A
STSR30D-TR
STMicroelectronics
1,471
3日
-
MOQ: 1  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
- - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 40ns,40ns - 1.5A,1.5A
STSR30D
STMicroelectronics
1,055
3日
-
MOQ: 1  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
Tube - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Single Low-Side 1 N-Channel MOSFET - 40ns,40ns - 1.5A,1.5A
DGD1503S8-13
Diodes Incorporated
2,500
3日
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA