メーカー:
Voltage - Supply:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
8個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Voltage - Supply Operating Temperature Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX620CWN+
Maxim Integrated
135
3日
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
MAX620EWN+
Maxim Integrated
お問い合わせ
-
-
MOQ: 80  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tube 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
MAX620CWN
Maxim Integrated
お問い合わせ
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
MAX620EWN
Maxim Integrated
お問い合わせ
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
IX6R11S6
IXYS
お問い合わせ
-
-
MOQ: 42  MPQ: 1
IC BRIDGE DRIVER FOR N-CH MOSFET
Tube 10 V ~ 35 V -40°C ~ 125°C (TA) Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V 6A,6A
MAX620EWN+T
Maxim Integrated
お問い合わせ
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tape & Reel (TR) 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
MAX620CWN+T
Maxim Integrated
お問い合わせ
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tape & Reel (TR) 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
IX6R11S6T/R
IXYS
お問い合わせ
-
-
MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 4A 18-SOIC
Tape & Reel (TR) 10 V ~ 35 V -40°C ~ 125°C (TA) Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V 6A,6A