- Packaging:
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- Series:
-
- Operating Temperature:
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- Supplier Device Package:
-
- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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22個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT,SiC MOSFET | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT,N-Channel MOSFET | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
12,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
14,341
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
14,341
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | - | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
27,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
28,160
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
28,160
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive,AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns,240ns | 2A,2A | ||||
Diodes Incorporated |
2,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | N-Channel MOSFET | 175ns,20ns | 2A,7A | ||||
Diodes Incorporated |
2,931
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | N-Channel MOSFET | 175ns,20ns | 2A,7A |