- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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862個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | 8A,8A | ||||
Diodes Incorporated |
5,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Tape & Reel (TR) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | 2.5A,6A | ||||
Diodes Incorporated |
5,330
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Cut Tape (CT) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | 2.5A,6A | ||||
Diodes Incorporated |
5,330
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | 2.5A,6A | ||||
Texas Instruments |
6,000
|
3日 |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | 2A,2A | ||||
Texas Instruments |
9,372
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | 2A,2A | ||||
Texas Instruments |
9,372
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | 2A,2A | ||||
ON Semiconductor |
10,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 10.6A,11.4A | ||||
ON Semiconductor |
12,541
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 10.6A,11.4A |