Package / Case:
Rise / Fall Time (Typ):
1,542個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3006E6TA
Diodes Incorporated
21,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3003E6TA
Diodes Incorporated
9,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 8.9ns,8.9ns - 5A,5A
ZXGD3006E6QTA
Diodes Incorporated
6,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side IGBT,SiC MOSFET 48ns,35ns - 10A,10A
ZXGD3004E6TA
Diodes Incorporated
33,000
3日
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 13.4ns,12.4ns - 8A,8A
IRS44273LTRPBF
Infineon Technologies
15,000
3日
-
MOQ: 3000  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
Tape & Reel (TR) μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V 1.5A,1.5A
IRS44273LTRPBF
Infineon Technologies
15,397
3日
-
MOQ: 1  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
Cut Tape (CT) μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V 1.5A,1.5A
IRS44273LTRPBF
Infineon Technologies
15,397
3日
-
MOQ: 1  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
- μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V 1.5A,1.5A
ZXGD3103N8TC
Diodes Incorporated
5,000
3日
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side N-Channel MOSFET 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side N-Channel MOSFET 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3日
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side N-Channel MOSFET 450ns,21ns - 2.5A,6A
LM5112SDX/NOPB
Texas Instruments
22,500
3日
-
MOQ: 4500  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
Tape & Reel (TR) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side N-Channel MOSFET 14ns,12ns 0.8V,2.3V 3A,7A
LM5112SDX/NOPB
Texas Instruments
28,650
3日
-
MOQ: 1  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
Cut Tape (CT) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side N-Channel MOSFET 14ns,12ns 0.8V,2.3V 3A,7A