29個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
PE29100A-X
pSemi
500
3日
-
MOQ: 500  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Tape & Reel (TR) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die Half-Bridge 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3日
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Cut Tape (CT) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die Half-Bridge 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3日
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
- - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die Half-Bridge 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
ZXGD3113W6-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
SYNCH MOSFET CONTROLLER SOT23 T&
Tape & Reel (TR) - 3.5 V ~ 40 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Low-Side 1 N-Channel MOSFET - 360ns,210ns - 1.5A,3A
ZXGD3113W6-7
Diodes Incorporated
1,531
3日
-
MOQ: 1  MPQ: 1
SYNCH MOSFET CONTROLLER,SOT23
Cut Tape (CT) - 3.5 V ~ 40 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Low-Side 1 N-Channel MOSFET - 360ns,210ns - 1.5A,3A
ZXGD3113W6-7
Diodes Incorporated
1,531
3日
-
MOQ: 1  MPQ: 1
SYNCH MOSFET CONTROLLER,SOT23
- - 3.5 V ~ 40 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Low-Side 1 N-Channel MOSFET - 360ns,210ns - 1.5A,3A
UCC27712DR
Texas Instruments
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
700V GATE DRIVER
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3日
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3日
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
UCC27712QDRQ1
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3日
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3日
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
- Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDQ1
Texas Instruments
963
3日
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Tube Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712D
Texas Instruments
903
3日
-
MOQ: 1  MPQ: 1
620-V,1.8-A,2.8-A HIGH-SIDE LO
Tube - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
ZXGD3109N8TC
Diodes Incorporated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
SYNCH MOSFET CONTROLLER 8SO
Tape & Reel (TR) - 4.5 V ~ 12 V -40°C ~ 125°C 8-SOIC (0.154",3.90mm Width) 8-SO - 1 N-Channel MOSFET - 42ns,42ns - 5A,5A
ZXGD3110N8TC
Diodes Incorporated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
SYNCH MOSFET CONTROLLER 8SO
Tape & Reel (TR) - 4.5 V ~ 12 V -40°C ~ 125°C 8-SOIC (0.154",3.90mm Width) 8-SO - 1 N-Channel MOSFET - 42ns,42ns - 5A,5A
HR2000GS-Z
Monolithic Power Systems Inc.
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE 16SOIC
Tape & Reel (TR) - 10 V ~ 12 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Half-Bridge 2 N-Channel MOSFET 600V - - -
HR2000GS
Monolithic Power Systems Inc.
お問い合わせ
-
-
MOQ: 50  MPQ: 1
IC GATE DRVR HALF BRIDGE 16SOIC
Tube - 10 V ~ 12 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Half-Bridge 2 N-Channel MOSFET 600V - - -
NCD5701CDR2G
ON Semiconductor
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Tape & Reel (TR) - 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 1 IGBT - 18ns,19ns - 7.8A,6.8A
NCD5701CDR2G
ON Semiconductor
2,472
3日
-
MOQ: 1  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Cut Tape (CT) - 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC High-Side or Low-Side 1 IGBT - 18ns,19ns - 7.8A,6.8A