18個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Voltage - Supply Operating Temperature Input Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD05473FN-7
Diodes Incorporated
3,000
3日
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) 4.5 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
DGD05473FN-7
Diodes Incorporated
3,076
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) 4.5 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
DGD05473FN-7
Diodes Incorporated
3,076
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 4.5 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
DGD0506AFN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
2,553
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
2,553
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
2,845
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
2,845
3日
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) CMOS/TTL N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V 1.5A,2A
DGD0506FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0506FN-7
Diodes Incorporated
1,524
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0506FN-7
Diodes Incorporated
1,524
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0507FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
DGD0507FN-7
Diodes Incorporated
2,991
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
DGD0507FN-7
Diodes Incorporated
2,991
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- 8 V ~ 14 V -40°C ~ 150°C (TJ) CMOS/TTL N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
DGD0504FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV 10-WDFN
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0504FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0504FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
- 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA