- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
2,355個の商品を探す
 |
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
28,897
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
|
|
|
Texas Instruments |
28,897
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
- | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
|
|
|
Infineon Technologies |
10,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
12,190
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
12,190
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
10,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
12,541
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
12,541
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
Infineon Technologies |
10,000
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,887
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,887
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
7,500
|
3日 |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
