Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
2,535個の商品を探す
画像 品番 メーカー 数量 配達期間 単価 買う 説明 Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2103MS8-13
Diodes Incorporated
2,401
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2304S8-13
Diodes Incorporated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V 290mA,600mA
DGD2304S8-13
Diodes Incorporated
1,703
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V 290mA,600mA
DGD2304S8-13
Diodes Incorporated
1,703
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V 290mA,600mA
IRS2001SPBF
Infineon Technologies
1,358
3日
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 200V 8-SOIC
Tube - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 70ns,35ns 0.8V,2.5V 290mA,600mA
MAX15024AATB+T
Maxim Integrated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
MAX15024AATB+T
Maxim Integrated
2,143
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
MAX15024AATB+T
Maxim Integrated
2,143
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
- Automotive,AEC-Q100 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
FAN7380MX
ON Semiconductor
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 230ns,90ns 0.8V,2.5V 90mA,180mA
FAN7380MX
ON Semiconductor
2,919
3日
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8SOIC
Cut Tape (CT) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 230ns,90ns 0.8V,2.5V 90mA,180mA
FAN7380MX
ON Semiconductor
2,919
3日
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8SOIC
- - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 230ns,90ns 0.8V,2.5V 90mA,180mA
DGD0506FN-7
Diodes Incorporated
お問い合わせ
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Tape & Reel (TR) - 8 V ~ 14 V 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0506FN-7
Diodes Incorporated
1,524
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Cut Tape (CT) - 8 V ~ 14 V 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0506FN-7
Diodes Incorporated
1,524
3日
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- - 8 V ~ 14 V 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD2103AS8-13
Diodes Incorporated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2103AS8-13
Diodes Incorporated
2,490
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2103AS8-13
Diodes Incorporated
2,490
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2104AS8-13
Diodes Incorporated
お問い合わせ
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3日
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA