PMIC - ゲートドライバ - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Input Type：

Channel Type：

Driven Configuration：

Number of Drivers：

Gate Type：

High Side Voltage - Max (Bootstrap)：

Rise / Fall Time (Typ)：

Logic Voltage - VIL, VIH：

画像	品番	メーカー	数量	配達期間	単価	買う	説明	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH
画像	品番	メーカー	数量	配達期間	単価	買う	説明	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH
	ADP3623ARDZ-RL	Analog Devices Inc.	4,805	3日	-	IC MOSFET DVR 4A DL HS 8SOIC MOQ: 1 MPQ: 1	IC MOSFET DVR 4A DL HS 8SOIC	Cut Tape (CT)	-	4.5 V ~ 18 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	10ns，10ns	0.8V，2V
	ADP3623ARDZ-RL	Analog Devices Inc.	4,805	3日	-	IC MOSFET DVR 4A DL HS 8SOIC MOQ: 1 MPQ: 1	IC MOSFET DVR 4A DL HS 8SOIC	-	-	4.5 V ~ 18 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	10ns，10ns	0.8V，2V
	UCC27424P	Texas Instruments	3,710	3日	-	IC MOSFET DVR DUAL HS 4A 8-DIP MOQ: 1 MPQ: 1	IC MOSFET DVR DUAL HS 4A 8-DIP	Tube	-	4 V ~ 15 V	-55°C ~ 150°C (TJ)	8-DIP (0.300"，7.62mm)	8-PDIP	Through Hole	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC37324P	Texas Instruments	2,949	3日	-	IC DUAL HS PWR FET DRVR 8-DIP MOQ: 1 MPQ: 1	IC DUAL HS PWR FET DRVR 8-DIP	Tube	-	4.5 V ~ 15 V	-55°C ~ 150°C (TJ)	8-DIP (0.300"，7.62mm)	8-PDIP	Through Hole	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC27323DGN	Texas Instruments	4,429	3日	-	IC MOSFET DRVR DUAL HS 4A 8-MSOP MOQ: 1 MPQ: 1	IC MOSFET DRVR DUAL HS 4A 8-MSOP	Tube	-	4.5 V ~ 15 V	-55°C ~ 150°C (TJ)	8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad	8-MSOP-PowerPad	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC37325D	Texas Instruments	3,956	3日	-	IC DUAL HS PWR FET DRVR 8-SOIC MOQ: 1 MPQ: 1	IC DUAL HS PWR FET DRVR 8-SOIC	Tube	-	4.5 V ~ 15 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC27423D	Texas Instruments	3,701	3日	-	IC MOSFET DVR DUAL HS 4A 8-SOIC MOQ: 1 MPQ: 1	IC MOSFET DVR DUAL HS 4A 8-SOIC	Tube	-	4 V ~ 15 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC27424D	Texas Instruments	3,118	3日	-	IC MOSFET DVR DUAL HS 4A 8-SOIC MOQ: 1 MPQ: 1	IC MOSFET DVR DUAL HS 4A 8-SOIC	Tube	-	4 V ~ 15 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC37324D	Texas Instruments	3,053	3日	-	IC DUAL HS PWR FET DRVR 8-SOIC MOQ: 1 MPQ: 1	IC DUAL HS PWR FET DRVR 8-SOIC	Tube	-	4.5 V ~ 15 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC27424DGN	Texas Instruments	2,135	3日	-	IC MOSFET DVR DUAL HS 4A 8-MSOP MOQ: 1 MPQ: 1	IC MOSFET DVR DUAL HS 4A 8-MSOP	Tube	-	4 V ~ 15 V	-55°C ~ 150°C (TJ)	8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad	8-MSOP-PowerPad	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	UCC27323D	Texas Instruments	1,151	3日	-	IC MOSFET DRVR DUAL HS 4A 8-SOIC MOQ: 1 MPQ: 1	IC MOSFET DRVR DUAL HS 4A 8-SOIC	Tube	-	4.5 V ~ 15 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	20ns，15ns	1V，2V
	IRS21864PBF	Infineon Technologies	2,067	3日	-	IC DRIVER HI/LO SIDE 600V 14-DIP MOQ: 1 MPQ: 1	IC DRIVER HI/LO SIDE 600V 14-DIP	Tube	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	14-DIP (0.300"，7.62mm)	14-DIP	Through Hole	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	22ns，18ns	0.8V，2.5V
	MAX5056AASA+	Maxim Integrated	437	3日	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 1 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	Tube	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	32ns，26ns	0.8V，2.1V
	MAX5056BASA+	Maxim Integrated	129	3日	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 1 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	Tube	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	32ns，26ns	0.8V，2.1V
	MAX17603ATA+T	Maxim Integrated	2,500	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	Tape & Reel (TR)	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	40ns，25ns	2V，4.25V
	MAX17603ATA+T	Maxim Integrated	5,000	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 1 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	Cut Tape (CT)	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	40ns，25ns	2V，4.25V
	MAX17603ATA+T	Maxim Integrated	5,000	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 1 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	-	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel MOSFET	-	40ns，25ns	2V，4.25V
	MAX17605ATA+T	Maxim Integrated	2,500	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	Tape & Reel (TR)	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	IGBT，SiC MOSFET	-	40ns，25ns	2V，4.25V
	MAX17605ATA+T	Maxim Integrated	4,800	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 1 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	Cut Tape (CT)	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	IGBT，SiC MOSFET	-	40ns，25ns	2V，4.25V
	MAX17605ATA+T	Maxim Integrated	4,800	3日	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 1 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	-	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	IGBT，SiC MOSFET	-	40ns，25ns	2V，4.25V

正常に送信されました。