- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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65個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
8,446
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | ||||
Powerex Inc. |
1,469
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module,12 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 500ns,300ns | - | ||||
Texas Instruments |
4,512
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Infineon Technologies |
1,792
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | ||||
Maxim Integrated |
1,523
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
3,616
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
1,372
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | ||||
Texas Instruments |
1,000
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SID POWER DRIVER TO220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | ||||
Texas Instruments |
217
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A COMP FET DRIVER 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
531
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | ||||
Texas Instruments |
561
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRVR TO-220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | ||||
IXYS Integrated Circuits Division |
149
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-DI
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
Maxim Integrated |
92
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
629
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Maxim Integrated |
76
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
100
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
241
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A MOSFET 8 DIP DUAL INV/NON-INV
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
お問い合わせ
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8 DIP DUAL INVERTING
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
Renesas Electronics America Inc. |
お問い合わせ
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V |