- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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7個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
6,038
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 350mA,650mA | ||||
Renesas Electronics America Inc. |
9,825
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
3,101
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
3,781
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Inverting,Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 500mA,500mA | ||||
ON Semiconductor |
24,216
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 350mA,650mA | ||||
Diodes Incorporated |
1,524
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns,12ns | 1.5A,2.5A | ||||
Diodes Incorporated |
2,991
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns,13ns | 1.5A,2.5A |