- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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1,193個の商品を探す
画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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画像 | 品番 | メーカー | 数量 | 配達期間 | 単価 | 買う | 説明 | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
410
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS 8-MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 6A,6A | ||||
Microchip Technology |
361
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 6A,6A | ||||
Microchip Technology |
288
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 6A,6A | ||||
Microchip Technology |
318
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 6A,6A | ||||
Microchip Technology |
111
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 20ns,20ns | 6A,6A | ||||
Microchip Technology |
470
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 12ns,12ns | 4.5A,4.5A | ||||
Microchip Technology |
336
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 12ns,12ns | 4.5A,4.5A | ||||
Microchip Technology |
452
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 3A,3A | ||||
Microchip Technology |
190
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 3A,3A | ||||
Microchip Technology |
115
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 3A,3A | ||||
Microchip Technology |
220
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 4A,4A | ||||
Microchip Technology |
279
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 4A,4A | ||||
Microchip Technology |
70
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 4.5A,4.5A | ||||
Microchip Technology |
236
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 7 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 6A,6A | ||||
Microchip Technology |
370
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 9A,9A | ||||
Microchip Technology |
209
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 9A,9A | ||||
Microchip Technology |
52
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 4.5A,4.5A | ||||
Microchip Technology |
268
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns,15ns | 4A,4A | ||||
Microchip Technology |
386
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 9A,9A | ||||
Microchip Technology |
300
|
3日 |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 9A,9A |